Datasheet4U Logo Datasheet4U.com

BSC110N15NS5SC - MOSFET

General Description

.

.

.

.

Key Features

  • Dual-side cooled package with lowest Junction-top thermal resistance.
  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Ideal for high-frequency switching and synchronous rectification Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC110N06NS3G Power-Transistor Infineon Technologies
BSC118N10NSG Power-Transistor Infineon Technologies
BSC119N03SG Power-Transistor Infineon Technologies
BSC105N10LSFG Power-Transistor Infineon Technologies
BSC106N025SG Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
BSC110N15NS5 150V MOSFET
BSC112N06LD 60V MOSFET
BSC117N08NS5 MOSFET
BSC100N03LSG Power-Transistor
BSC100N03MSG Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC110N15NS5SC MOSFET OptiMOSTM5Power-Transistor,150V Features •Dual-sidecooledpackagewithlowestJunction-topthermalresistance •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 11 mΩ ID 77 A Qrr 46 nC PG-WSON-8 tab 4 3 2 1 5 6 7 8 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3, tab Type/OrderingCode BSC110N15NS5SC Package PG-WSON-8 Marking 110N15SC RelatedLinks - Final Data Sheet 1 Rev.2.