Infineon Technologies BSP51
NPN Silicon Darlington Transistors
| Part No. | BSP51 |
|---|---|
| Datasheet | BSP51 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon Darlington Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage BSP50 BSP51 BSP52 Collector-base voltage BSP50 BSP51 BSP52 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg Value 45 60 80 60 80 90 5 1 2 100 1.5 150 -65 ... 150 Unit V A mA W °C 1 2011-10-05 BSP50-BSP52 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 17 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE =...
