NXP Semiconductors BSP51
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V)
● Integrated diode and resistor.
APPLICATIONS
● Industrial high gain amplification. PINNING PIN 1 2,4 3 BSP50; BSP51; BSP52DESCRIPTION
base collector emitter 4 2, 4DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. 1 Top view 2 3 MAM265 1 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP50 BSP51 BSP52 VCES collector-emitter voltage BSP50 BSP51 BSP52 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambi...