Nexperia BSP51
NPN Darlington transistor
FEATURES AND BENEFITS
● High current of 1 A● Low voltage of 60 V
● Integrated diode and resistor 3.
APPLICATIONS
● Industrial high gain amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCBO collector-base voltage VCES collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open emitter base short-circuited to emitter VCE = 10 V; IC = 150 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Min Typ Max Unit - - 80 V - - 60 V - - 1 A - - 2 A [1] 1000 - - 5. Pinning information Table 2. Pinning information Pin SymbolDESCRIPTION
1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol C 4 B 123 SC-73 (SOT223) E aaa-027580 Nexperia BSP51 NPN Darlington transistor 6. Ordering information Table 3. Ordering information Type number Package Name BSP51 SC-73DESCRIPTION
Version plastic, surface-mounted package with increased heatsink; SOT223 4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body 7.