Infineon Technologies BSP89
Small-Signal-Transistor
| Part No. | BSP89 |
|---|---|
| Datasheet | BSP89 Download |
| Manufacturer |  Infineon Technologies |
| Description | Small-Signal-Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Continuous drain current TA=25°C TA=70°C Pulsed drain current TA=25°C Reverse diode dv/dt ID ID puls dv/dt 0.35 0.28 1.4 6 IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) VGS ±20 1A (>250V, <500V) Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Ptot Tj , Tstg 1.8 -55... +150 55/150/56 Unit A kV/µs V W °C Page 1 2012-11-29 Thermal Characteristics Parameter Rev. 2.2 Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP89 Symbol Values Unit min. typ. max. RthJS RthJA - - 25 K/W - - 115 - - 70ELECTRICAL CHARACTERISTICS
, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA Gate threshold voltage, VGS = VDS V(BR)DSS 240 - - VGS(th)...
