VBsemi Electronics BSP89
N-Channel 250V (D-S) MOSFET
| Part No. | BSP89 |
|---|---|
| Datasheet | BSP89 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 250V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Surface mount● Available in tape and reel
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements Available SOT-223 D S D G D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Linear Derating Factor (PCB Mount) e Single Pulse Avalanche Energy b EAS Repetitive Avalanche Current a IAR Repetitive Avalanche Energy a EAR Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) e Peak Diode Recovery dV/dt c TC = 25 °C TA = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 , IAS = 0.79 A (see fig.
