NXP Semiconductors BSP89
This data sheet contains data from the objective specification for product development. This data sheet contains data from the preliminary specification.| Part No. | BSP89 |
|---|---|
| Datasheet | BSP89 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Buy | Stock & Price |
FEATURES
● Direct interface to C-MOS, TTL, etc.● High-speed switching
● No secondary breakdown.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor in a SOT223 package, intended for use as a surface-mounted device in line current interrupters in telephone sets and for application in relay, high speed and line transformer drivers. PINNING - SOT223 PINDESCRIPTION
Code: BSP89 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA SYMBOL PARAMETER VDS VGSth ID RDSon drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance MAX. 240 2 375 5 UNIT V V mA Ω handbook, halfpage 4 d g 1 2 3 s Top view MAM109 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature CONDITIONS open drain Tamb ≤ 25 °C; note 1 MIN. − − − − − −55 − MAX.
