Datasheet4U Logo Datasheet4U.com

BSS340NW - MOSFET

General Description

.

.

.

.

Key Features

  • N-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • Avalanche rated.
  • Qualified according to AEC Q101.
  • 100% lead-free; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max, VGS=4.5 V 600 mΩ RDS(on),max, VGS=10V 400 mΩ ID 0.88 A SOT-323-3 Gate Pin 1 Drain Pin 2 Source Pin 3 Type / Ordering Code BSS340NW Package PG-SOT323 Marking XGs.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS308PE P-Channel MOSFET VBsemi
BSS38 NPN SILICON TRANSISTOR Micro Electronics
BSS38 NPN SILICON TRANSISTOR Micro Electronics
BSS100 SIPMOS Small-Signal Transistor Siemens Semiconductor Group
BSS100 N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild Semiconductor

Other Datasheets by Infineon

Part Number Description
BSS306N Small-Signal-Transistor
BSS308PE Small-Signal-Transistor
BSS314PE Small-Signal-Transistor
BSS315P P-Channel Transistor
BSS316N Small-Signal-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSS340NW MOSFET OptiMOSª2Small-Signal-Transistor,30V Features •N-channel •Enhancementmode •Logiclevel(4.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100%lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=4.5V 600 mΩ RDS(on),max,VGS=10V 400 mΩ ID 0.88 A SOT-323-3 Gate Pin 1 Drain Pin 2 Source Pin 3 Type/OrderingCode BSS340NW Package PG-SOT323 Marking XGs RelatedLinks - Final Data Sheet 1 Rev.2.0,2016-06-23 OptiMOSª2Small-Signal-Transistor,30V BSS340NW TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .