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OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21
BSZ018NE2LSI
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V
1.8 mW 40 A
23 nC 36 nC
PG-TSDSON-8 (fused leads)
Type
Package
BSZ018NE2LSI PG-TSDSON-8 (fused leads)
Marking 018NE2I
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
40 A 40 40
V GS=4.5 V, T C=100 °C
40
V GS=4.
BSZ018NE2LSI Datasheet
