CY15V116QSN Overview
VDD = 1.71 V to 1.89 V - CY15B116QSN: VDD = 1.8 V to 3.6 V Operating temperature: 40°C to +105°C Packages - 24-ball fine pitch ball grid array (FBGA) Restriction of hazardous substances (RoHS) pliant Functional description The EXCELON™ Ultra CY15x116QSN is a high-performance, 16-Mb non-volatile memory employing an advanced ferroelectric process.
CY15V116QSN Key Features
- 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (see “Data retention and endurance” on page 94)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Single and multi I/O serial peripheral interface (SPI)
- Serial bus interface SPI protocols
- Supports SPI Mode 0 (0, 0) and Mode 3f (1, 1) for all SDR mode transfers
- Supports SPI Mode 0 (0, 0) for all DDR mode transfers
- Extended I/O SPI protocols