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CY15V116QSN - 16Mb Ultra Ferroelectric RAM

Download the CY15V116QSN datasheet PDF. This datasheet also covers the CY15B116QSN variant, as both devices belong to the same 16mb ultra ferroelectric ram family and are provided as variant models within a single manufacturer datasheet.

General Description

Low-voltage operation: - CY15V116QSN: VDD = 1.71 V to 1.89 V - CY15B116QSN: VDD = 1.8 V to 3.6 V Operating temperature: - Extended industrial: 40°C to +105°C Packages - 24-ball fine pitch ball grid array (FBGA) Restriction of hazardous substances (RoH

Key Features

  • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process.
  • Single and multi I/O serial peripheral interface (SPI) - Serial bus interface SPI protocols - Supports SPI Mode 0 (0, 0) and Mode 3f (1, 1) for all SDR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY15B116QSN-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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CY15B004Q 4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM Cypress Semiconductor
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Other Datasheets by Infineon

Part Number Description
CY15V116QN 16Mb Auto Ferroelectric RAM
CY15V102QN Auto Ferroelectric RAM
CY15V104QN Auto Ferroelectric RAM
CY15V108QN LP Ferroelectric RAM
CY15B102QN Auto Ferroelectric RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY15B116QSN, CY15V116QSN 16Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 2048K × 8, 108 MHz, extended industrial Features • 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K  8 - Virtually unlimited endurance of 100 trillion (1014) read/write cycles - 151-year data retention (see “Data retention and endurance” on page 94) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process • Single and multi I/O serial peripheral interface (SPI) - Serial bus interface SPI protocols - Supports SPI Mode 0 (0, 0) and Mode 3f (1, 1) for all SDR mode transfers - Supports SPI Mode 0 (0, 0) for all DDR mode transfers - Extended I/O SPI protocols - Dual SPI (DPI) protocols - Quad SPI (QPI) protocols • SPI clock frequency -