F4-150R17ME4_B11 Datasheet | Infineon

Features - High DCstability - Highshort-circuitcapability - Low VCEsat - Tvjop=150°C - Trench IGBT4 - VCEsatwithpositivetemperaturecoefficient Mechanical Features - Al2O3substratewithlowthermalresistance - Highpowerdensity - Isolatedbaseplate - Press FITcontacttechnology Module Label Code Barcode Code128 DMX-Code Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet .infineon. Pleasereadthe Important Noticeand Warningsattheendofthisdocument V3.2 2017-09-18 IGBT,Wechselrichter/IGBT,Inverter Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES IC nom IC ICRM VGES 1700 150 230 300 +/-20 V A V...