F4-200R17N3E4 Datasheet | Infineon

Features - Low VCEsat - Tvjop=150°C - Trench IGBT4 - VCEsatwithpositivetemperaturecoefficient Mechanical Features - Integrated NTCtemperaturesensor - Isolatedbaseplate - Soldercontacttechnology - Standardhousing Module Label Code Barcode Code128 DMX-Code Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet .infineon. Pleasereadthe Important Noticeand Warningsattheendofthisdocument V3.0 2017-06-29 IGBT,Wechselrichter/IGBT,Inverter Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 95°C, Tvj max = 175°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES IC nom ICRM VGES 1700 200 400 +/-20 V A A V Charakteristische Werte/Characteristic Values Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 4,00 m A, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V Interner Gatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0...