F4-3L50R07W2H3F_B11 - IGBT

Features

CoolSiC (TM) Schottky diode gen 5.
High speed IGBT H3.
Low switching losses Mechanical Features.
3 kV AC 1min insulation.
Al2O3 substrate with low thermal resistance.
Compact design.
PressFIT contact technology.
Rugged mounting due to integrated mounting clamps Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Da.

Infineon

Datasheet Details

Part number	F4-3L50R07W2H3F_B11
Manufacturer	Infineon
File Size	1.09 MB
Description	IGBT
Datasheet	F4-3L50R07W2H3F_B11 Datasheet
Additional preview pages of the F4-3L50R07W2H3F_B11 datasheet.

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Full PDF Text Transcription

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F4-3L50R07W2H3F_B11 EasyPACKModulmitschnellemTrench/FeldstoppHigh-Speed3IGBTundSiCDiodeundPressFIT/NTC EasyPACKmodulewithfastTrench/FieldstopHigh-Speed3IGBTandSiCdiodeandPressFIT/NTC TypischeAnwendungen • 3-Level-Applikationen • Motorantriebe • SolarAnwendungen • USV-Systeme ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • HighSpeedIGBTH3 • NiedrigeSchaltverluste MechanischeEigenschaften • 3kVAC1minIsolationsfestigkeit • Al2O3 Substrat mit kleinem thermischen Widerstand • KompaktesDesign • PressFITVerbindungstechnik • Robuste Montage durch integrierte Befestigungsklammern J VCES = 650V IC nom = 50A / ICRM = 100A TypicalApplications • 3-level-applications • Motordrives • Solarapplications • UPSsystems ElectricalFeatures • CoolSi

Published: Jun 10, 2020 |