• Part: FD600R06ME3_S2
  • Description: IGBT
  • Manufacturer: Infineon
  • Size: 650.97 KB
Download FD600R06ME3_S2 Datasheet PDF
Infineon
FD600R06ME3_S2
FD600R06ME3_S2 is IGBT manufactured by Infineon.
Features - Tvjop=150°C Mechanical Features - Standard Housing Module Label Code Barcode Code128 DMX-Code preparedby:CU approvedby:MK Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-10-03 revision:2.4 ULapproved(E83335) Technische Information/Technical Information IGBT-Module IGBT-modules IGBT,Brems-Chopper/IGBT,Brake-Chopper Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 80°C, Tvj max = 150°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Vorläufige Daten Preliminary Data VCES IC nom ICRM Ptot VGES 600 600 1200 2250 +/-20 V A A W V Charakteristische Werte/Characteristic Values Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 24,0 m A, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V Interner Gatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0...