FD600R06ME3_S2
FD600R06ME3_S2 is IGBT manufactured by Infineon.
Features
- Tvjop=150°C
Mechanical Features
- Standard Housing
Module Label Code
Barcode Code128
DMX-Code preparedby:CU approvedby:MK
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week)
Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-10-03 revision:2.4
ULapproved(E83335)
Technische Information/Technical Information
IGBT-Module IGBT-modules
IGBT,Brems-Chopper/IGBT,Brake-Chopper
Höchstzulässige Werte/Maximum Rated Values
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom Continuous DCcollectorcurrent
TC = 80°C, Tvj max = 150°C
Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
Vorläufige Daten Preliminary Data
VCES IC nom ICRM Ptot VGES
600 600 1200 2250 +/-20
V A A W V
Charakteristische Werte/Characteristic Values
Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage
IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V
Tvj = 25°C Tvj = 125°C
Gate-Schwellenspannung Gatethresholdvoltage
IC = 24,0 m A, VCE = VGE, Tvj = 25°C
Gateladung Gatecharge
VGE = -15 V ... +15 V
Interner Gatewiderstand Internalgateresistor
Tvj = 25°C
Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0...