FD650R17IE4
FD650R17IE4 is IGBT manufactured by Infineon.
Features
- Extended Operation Temperature Tvjop
- High DCStability
- High Current Density
- Low Switching Losses
- Tvjop=150°C
- Low VCEsat
Mechanical Features
- Packagewith CTI>400
- High Creepageand Clearance Distances
- High Powerand Thermal Cycling Capability
- High Power Density
- Copper Base Plate
- Standard Housing
Module Label Code
Barcode Code128
DMX-Code preparedby:RH approvedby:MS
Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) dateofpublication:2013-11-05 revision:2.1
Digit 1-5 6-11 12-19 20-21 22-23
Technische Information/Technical Information
IGBT-Module IGBT-modules
IGBT,Brems-Chopper/IGBT,Brake-Chopper
Höchstzulässige Werte/Maximum Rated Values
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom Continuous DCcollectorcurrent
TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C
Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
Vorläufige Daten Preliminary Data
VCES
IC nom IC
ICRM
Ptot
VGES...