• Part: FD650R17IE4
  • Description: IGBT
  • Manufacturer: Infineon
  • Size: 1.68 MB
Download FD650R17IE4 Datasheet PDF
Infineon
FD650R17IE4
FD650R17IE4 is IGBT manufactured by Infineon.
Features - Extended Operation Temperature Tvjop - High DCStability - High Current Density - Low Switching Losses - Tvjop=150°C - Low VCEsat Mechanical Features - Packagewith CTI>400 - High Creepageand Clearance Distances - High Powerand Thermal Cycling Capability - High Power Density - Copper Base Plate - Standard Housing Module Label Code Barcode Code128 DMX-Code preparedby:RH approvedby:MS Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) dateofpublication:2013-11-05 revision:2.1 Digit 1-5 6-11 12-19 20-21 22-23 Technische Information/Technical Information IGBT-Module IGBT-modules IGBT,Brems-Chopper/IGBT,Brake-Chopper Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Vorläufige Daten Preliminary Data VCES IC nom IC ICRM Ptot VGES...