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FS100R12KT4G_B11 - IGBT-Module

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KT4G_B11 EconoPACK™3ModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™3modulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4diode VorläufigeDaten IGBT,Wechselrichter/IGBT,Inverter PreliminaryData HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES  1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 95°C, Tvj max = 175°C IC nom  100 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM  200 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175 Ptot  515 W Gate-Emitter-Spitzenspannung