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FZ800R45KL3_B5 - IGBT

Description

Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-07-17 FZ800R45KL3_B5 Highly insulated module Table of contents Table of contents Description

Features

  • Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient.
  • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.4 kV AC 60 s Potential.

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Full PDF Text Transcription

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FZ800R45KL3_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.
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