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FZ825R33HE4D - IHM-B module

Description

Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2022-11-22 FZ825R33HE4D IHM-B module Table of contents Table of contents Description

Features

  • Electrical features - VCES = 3300 V - IC nom = 825 A / ICRM = 1650 A - Low Qg and Cres - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Trench IGBT 4 - Unbeatable robustness - VCE,sat with positive temperature coefficient - High current density.
  • Mechanical features - AlSiC base plate for increased thermal cycling capability - High power density - Isolated base plate - Package with CTI > 600 - RoHS compliant Potential a.

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Full PDF Text Transcription

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FZ825R33HE4D IHM-B module IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode Features • Electrical features - VCES = 3300 V - IC nom = 825 A / ICRM = 1650 A - Low Qg and Cres - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Trench IGBT 4 - Unbeatable robustness - VCE,sat with positive temperature coefficient - High current density • Mechanical features - AlSiC base plate for increased thermal cycling capability - High power density - Isolated base plate - Package with CTI > 600 - RoHS compliant Potential applications • High-power converters • Medium-voltage converters • Motor drives • Traction drives • UPS systems • Active frontend (energy recovery) Product validation • Qualified for industrial applications acc
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