Description
C
Type IHW30N65R6
G
Package PG-TO247-3
E
Marking H30ER6
Datasheet www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.20 2021-03-22
IHW30N65R6
Reverse-Conducting IGBT
Table of contents
Table of contents
Description
Features
- Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/.
- Easy parallel switching capability due to positive temperature coefficient in VCEsat.
- High ruggedness and stable temperature behavior.
- Low EMI.
- Pb-free lead plating; RoHS compliant.
- Powerful monolithic reverse-conducting diode with low forward voltage.
- Very low VCEsat and low Eoff.
- Very tight parameter distribution Potential.
H30ER6 Datasheet
