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H30ER6 - IGBT

General Description

C Type IHW30N65R6 G Package PG-TO247-3 E Marking H30ER6 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.20 2021-03-22 IHW30N65R6 Reverse-Conducting IGBT Table of contents Table of contents Description

Key Features

  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/.
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat.
  • High ruggedness and stable temperature behavior.
  • Low EMI.
  • Pb-free lead plating; RoHS compliant.
  • Powerful monolithic reverse-conducting diode with low forward voltage.
  • Very low VCEsat and low Eoff.
  • Very tight parameter distribution Potential.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IHW30N65R6 Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode Features • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ • Easy parallel switching capability due to positive temperature coefficient in VCEsat • High ruggedness and stable temperature behavior • Low EMI • Pb-free lead plating; RoHS compliant • Powerful monolithic reverse-conducting diode with low forward voltage • Very low VCEsat and low Eoff • Very tight parameter distribution Potential applications • Induction Cooking • Microwave Ovens Product validation • Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 G C E Description C Type IHW30N65R6 G Package PG-TO247-3 E Marking H30ER6 Datasheet www.infineon.