H30R1202 - Reverse Conducting IGBT

Infineon

Key Features

Powerful monolithic Body Diode with very low forward voltage.
Body diode clamps negative voltages.
TrenchStop® and Fieldstop technology for 1200 V.

H30R1202 reverse conducting igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	H30R1202
Manufacturer	Infineon
File Size	381.71 KB
Description	Reverse Conducting IGBT
Datasheet	H30R1202 Datasheet

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Full PDF Text Transcription (Reference)

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IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.