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H30R1353 - IGBT

General Description

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Key Features

  • Offers new higher breakdown voltage to 1350V for improved reliability.
  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.

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ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl IHW30N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSp