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OptiMOSTM-5 Power-Transistor
Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI)
IAUC100N10S5L040
Product Summary VDS RDS(on) ID
100 V 4 mW
100 A
PG-TDSON-8
1
Type IAUC100N10S5L040
Package PG-TDSON-8
Marking 5N10L040
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage
ID
I D,pulse E AS I AS V GS
T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=50A -
Power dissipation
P tot
T C=25°C, T J =175°C
Operating and storage temperature T j, T stg -
Value
Unit
100
A
100
400
150
mJ
86
IAUC100N10S5L040 Datasheet
