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IAUC100N10S5L040 - Power Transistor

Key Features

  • N-channel - Enhancement mode - Logic level.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 100% Avalanche tested.
  • Feasible for automatic optical inspection (AOI) IAUC100N10S5L040 Product Summary VDS RDS(on) ID 100 V 4 mW 100 A PG-TDSON-8 1 Type IAUC100N10S5L040 Package PG-TDSON-8 Marking 5N10L040 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche.

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Full PDF Text Transcription for IAUC100N10S5L040 (Reference)

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OptiMOSTM-5 Power-Transistor Features • N-channel - Enhancement mode - Logic level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for a...

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MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IAUC100N10S5L040 Product Summary VDS RDS(on) ID 100 V 4 mW 100 A PG-TDSON-8 1 Type IAUC100N10S5L040 Package PG-TDSON-8 Marking 5N10L040 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage ID I D,pulse E AS I AS V GS T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=50A - Power dissipation P tot T C=25°C, T J =175°C Operating and storage temperature T j, T

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