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IAUC24N10S5L300
OptiMOSTM-5 Power-Transistor
Product Summary
Features • OptiMOS™ - power MOSFET for automotive applications
VDS RDS(on) ID
100 V 30 mW 24 A
PG-TDSON-8
• N-channel - Enhancement mode - Logic level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche tested
1 1
• Feasible for automatic optical inspection (AOI)
Type IAUC24N10S5L300
Package PG-TDSON-8
Marking 5N10L300
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage
ID
I D,pulse E AS I AS V GS
T C=25°C, V GS=10V T C=100°C, V GS=10V T C=25°C I D=10A -
Power dissipation
P tot
T C=25°C, T J
IAUC24N10S5L300 Datasheet
