IDK02G65C5 Datasheet | Infineon

Si C Silicon Carbide Diode 5th Generation thin Q!TM 650V Si C Schottky Diode Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thin Q!™ Si C Schottky Diode Description Thin Q!™ Generation 5 represents Infineon leading edge technology for the Si C Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now bined with a new, more pact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thin Q!™ Generation 5 has been designed to plement our 650V Cool MOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features - Revolutionary semiconductor material - Silicon Carbide - Benchmark switching behavior - No reverse recovery/ No forward recovery - Temperature independent switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 4.5 m A2) - Optimized for high temperature operation Benefits - System efficiency improvement over Si diodes - System cost / size savings due to reduced cooling requirements - Enabling higher frequency / increased power density solutions - Higher system reliability due to lower operating temperatures - Reduced EMI Applications - Switch mode power supply - Power factor...