Datasheet4U Logo Datasheet4U.com

IDK04G65C5 - Silicon Carbide Diode

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

and thin-wafer technology.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Infineon

Part Number Description
IDK02G120C5 1200V Schottky Diode
IDK02G65C5 Silicon Carbide Diode
IDK03G65C5 Silicon Carbide Diode
IDK05G120C5 1200V Schottky Diode
IDK05G65C5 Silicon Carbide Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK04G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).