Description
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode
Features
- Revolutionary semiconductor material - Silicon Carbide.
- No reverse recovery current / no forward recovery.
- Temperature independent switching behaviour.
- Low forward voltage even at high operating temperature.
- Tight forward voltage distribution.
- Excellent thermal performance
1 2.
- Extended surge current capability.
- Specified dv/dt ruggedness.
- Pb-free lead plating; RoHS compliant
Potential.
IDK05G120C5 Datasheet
