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IDK08G120C5 - 1200V Schottky Diode

Description

System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / no forward recovery.
  • Temperature independent switching behaviour.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance 1 2.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Pb-free lead plating; RoHS compliant Potential.

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Datasheet preview – IDK08G120C5

Datasheet Details

Part number IDK08G120C5
Manufacturer Infineon
File Size 1.01 MB
Description 1200V Schottky Diode
Datasheet download datasheet IDK08G120C5 Datasheet
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IDK08G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky Diode IGC13R65U8W2 SiC Diode Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 1 2  Extended surge current capability  Specified dv/dt ruggedness  Pb-free lead plating; RoHS compliant Potential applications Pin definition Pin 1 and backside: Cathode 1 Pin 2: Anode 2  Drives  Industrial power supplies: Industrial UPS  Solar central inverters and Solar string inverter Product validation  Qualified for industrial applications according to t
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