IDK10G120C5 Description
System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: page 1 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode...
IDK10G120C5 Key Features
- Revolutionary semiconductor material
- Silicon Carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Pb-free lead plating; RoHS pliant