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IDK12G65C5 - Silicon Carbide Diode

Description

Schottky Barrier diodes.

wafer technology.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IDK12G65C5
Manufacturer Infineon
File Size 585.30 KB
Description Silicon Carbide Diode
Datasheet download datasheet IDK12G65C5 Datasheet
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Full PDF Text Transcription

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SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin- wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
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