IDM05G120C5
IDM05G120C5 is Silicon Carbide Schottky Diode manufactured by Infineon.
Diode
Silicon Carbide Schottky Diode
5th Generation thin Q!™ 1200 V Si C Schottky Diode
Final Datasheet
Rev. 2.0 2015-08-28
Industrial Power Control
Si C Schottky Diode
5th Generation thin Q!™ 1200 V Si C Schottky Diode
Features
:
- Revolutionary semiconductor material
- Silicon Carbide
- No reverse recovery current / No forward recovery
- Temperature independent switching behavior
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
Benefits
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
- Related Links: .infineon./sic
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