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IDM08G120C5 Datasheet Diode

Manufacturer: Infineon

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General Description

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.............................................................................................................................................2 Table of Contents........................................................................................................................................3 Maximum ratings.........................................................................................................................................4 Thermal Resistances .........................................................

Overview

Diode Silicon Carbide Schottky Diode IDM08G120C5 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev.

2.0 2015-07-22 Industrial Power Control SiC Schottky Diode IDM08G120C5 5th Generation thinQ!

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

More Datasheets from Infineon

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IDM02G120C5 Diode
IDM05G120C5 Silicon Carbide Schottky Diode
IDM10G120C5 1200V SiC Schottky Diode