IDM10G120C5 Datasheet | Infineon

Diode Silicon Carbide Schottky Diode 5th Generation Cool Si C™ 1200 V Si C Schottky Diode Final Datasheet Rev. 2.1 2021-06-09 Industrial Power Control 5th Generation Cool Si C™ 1200 V Si C Schottky Diode Cool Si CTM Si C Schottky Diode Features : - Revolutionary semiconductor material - Silicon Carbide - No reverse recovery current / No forward recovery - Temperature independent switching behavior - Low forward voltage even at high operating temperature - Tight forward voltage distribution - Excellent thermal performance - Extended surge current capability - Specified dv/dt ruggedness - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Benefits - System efficiency improvement over Si diodes - System cost / size savings due to reduced cooling requirements - Enabling higher frequency / increased power density solutions - Higher system reliability due to lower operating temperatures - Reduced EMI - Related Links: .infineon./sic 1...