IGC114T170S8RM
IGC114T170S8RM is IGBT manufactured by Infineon.
IGBT3 Power Chip
Features
:
- 1700V Trench + Field stop technology
- low switching losses
- soft turn off
- positive temperature coefficient
- easy paralleling
This chip is used for:
- power modules
Applications:
- drives
Chip Type
Die Size
IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
9.47 x 12.08
7.254 x 9.858 1.674 x 0.899 mm2
190 µm
200 mm
Photoimide
3200 nm...
