IGC136T170S8RH2
IGC136T170S8RH2 is IGBT manufactured by Infineon.
IGBT3 Power Chip
Features
:
- 1700V Trench & Field stop technology
- low switching losses and saturation losses
- soft turn off
- positive temperature coefficient
- easy paralleling
- Qualified according to JEDEC for target applications
Remended for:
- power modules
Applications:
- drives
Chip Type
ICn1 )
Die Size
Package
IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2 sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test
- verified by design/characterization
Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside...