IKQ50N120CT2 - IGBT

Description

Features

Infineon

Datasheet Details

Part number	IKQ50N120CT2
Manufacturer	Infineon
File Size	1.60 MB
Description	IGBT
Datasheet	IKQ50N120CT2 Datasheet
Additional preview pages of the IKQ50N120CT2 datasheet.

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Full PDF Text Transcription

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IKQ50N120CT2 TRENCHSTOPTM2lowVce(sat)secondgenerationIGBT LowVce(sat)IGBTinTRENCHSTOP™2technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlledDiode Features: C TRENCHSTOP™2technologyoffers: •VerylowVCE(sat),1.75Vatnominalcurrent •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) •LowEMI •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |