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IKW40N65F5 - IGBT

General Description

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Key Features

  • C High speed F5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low Qg.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription for IKW40N65F5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IKW40N65F5. For precise diagrams, and layout, please refer to the original PDF.

IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP40N65F5,IKW40N65F5 650VDuoPackIGBTandDiode Highs...

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ralleldiode IKP40N65F5,IKW40N65F5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKW40N65F5,IKP40N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQg •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortarget

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