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IKW40N65H5 - IGBT

Key Features

  • C High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • IGBT copacked with RAPID 1 fast and soft antiparallel diode.
  • Maximum junction temperature 175°C.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription for IKW40N65H5 (Reference)

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP40N65H5,IKW40N65H5 650VDuoPackIGBTanddiode Highspeeds...

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diode IKP40N65H5,IKW40N65H5 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKP40N65H5,IKW40N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode  FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontempera

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