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IKW40N65WR5 - Reverse conducting IGBT

General Description

C TO-247 3Pin 2021-10-27 restricted Type IKW40N65WR5 G E Package PG-TO247-3 Marking K40EWR5 Copyright © Infineon T Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2023-06-06 IKW40N65WR5 Reverse-Condu

Key Features

  • VCE = 650 V.
  • IC = 40 A.
  • Powerful monolithic diode optimized for ZCS.

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Full PDF Text Transcription for IKW40N65WR5 (Reference)

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IKW40N65WR5 Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode Features • VCE = 650 V • IC = 40 A • Powerful monolithic diode optimized for ZCS ap...

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E = 650 V • IC = 40 A • Powerful monolithic diode optimized for ZCS applications • High ruggedness, temperature stable behavior • Very low VCEsat and low Eoff • Easy paralleling capability due to positive temperature coefficient in VCEsat • Low EMI • Low electrical parameters depending (dependence) on temperature • Qualified according to JESD-022 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Potential applications • Welding • PFC • ZCS - converters Description C TO-247 – 3Pin 2021-10-27 restricted Type IKW40N65WR5 G E Package PG-T

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