Datasheet Summary
Reverse-Conducting IGBT
Reverse-Conducting IGBT with monolithic body diode
Features
- VCE = 650 V
- IC = 40 A
- Powerful monolithic diode optimized for ZCS applications
- High ruggedness, temperature stable behavior
- Very low VCEsat and low Eoff
- Easy paralleling capability due to positive temperature coefficient in VCEsat
- Low EMI
- Low electrical parameters depending (dependence) on temperature
- Qualified according to JESD-022 for target applications
- Pb-free lead plating; RoHS pliant
- plete product spectrum and PSpice Models: http://.infineon./igbt/ Potential applications
- Welding
- PFC
- ZCS
- converters
Description
TO-247
- 3Pin
2021-10-27...