IMBG120R220M1H Description
IMBG120R220M1H IMBG120R220M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology.
IMBG120R220M1H Key Features
- Very low switching losses
- Short circuit withstand time 3 µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance
- Package creepage and clearance distance > 6.1mm
- Sense pin for optimized switching performance
- Efficiency improvement