IMYH200R024M1H Datasheet | Infineon

Features - VDSS = 2000 V at Tvj = 25°C - IDCC = 89 A at Tc = 25°C - RDS(on) = 24 mΩ at VGS = 18 V, Tvj = 25°C - Very low switching losses - Benchmark gate threshold voltage, VGS(th) = 4.5 V - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications - String inverter - Solar power optimizer - EV-Charging Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 - Please also note the application note AN2019-05 for power and thermal cycling Description - drain - source - Kelvin sense contact - gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R024M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H024 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-16 Cool Si C™ 2000 V Si C Trench MOSFET Table of contents Table of contents Description - - - - -...