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IMYH200R050M1H Datasheet 2000V SiC Trench MOSFET

Manufacturer: Infineon

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General Description

1 – drain 2 – source 3 – Kelvin sense contact 4 – gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R050M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H050 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-16 IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET Table of contents Table of contents Description .

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Overview

IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .

Key Features

  • VDSS = 2000 V at Tvj = 25°C.
  • IDCC = 48 A at Tc = 25°C.
  • RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved. Potential.

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