IMYH200R100M1H Description
1 drain 2 source 3 Kelvin sense contact 4 gate Note: Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-16 IMYH200R100M1H CoolSiC™ 2000 V SiC Trench MOSFET Table of contents Table of contents Description.
IMYH200R100M1H Key Features
- VDSS = 2000 V at Tvj = 25°C
- IDCC = 26 A at Tc = 25°C
- RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust body diode for hard mutation
- XT interconnection technology for best-in-class thermal performance