IMYR140R011M2H - 1400V SiC MOSFET

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Infineon

Datasheet Details

Part number	IMYR140R011M2H
Manufacturer	Infineon
File Size	1.14 MB
Description	1400V SiC MOSFET
Datasheet	IMYR140R011M2H Datasheet
Additional preview pages of the IMYR140R011M2H datasheet.

Product details

Description

Pin definition: 1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R011M2H Package PG-TO247-4-U08 Marking 14M2H011 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-25 IMYR140R011M2H CoolSiC™ 1400 V SiC MOSFET G2 Table of contents T

Features

VDSS = 1400 V at Tvj = 25°C.
IDDC = 115 A at TC = 100°C.
RDS(on) = 11.5 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Package backside suitable for reflow soldering at 260°C, 3 times.
Overload operation up to Tvj = 200°C.
Short circuit withstand time 2 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body di.

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Published: May 20, 2025 |