IMYR140R011M2H Description
1 Drain 2 Source 3 Kelvin sense contact 4 Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R011M2H Package PG-TO247-4-U08 Marking 14M2H011 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-25 IMYR140R011M2H CoolSiC™ 1400 V SiC MOSFET G2 Table of...
IMYR140R011M2H Key Features
- VDSS = 1400 V at Tvj = 25°C
- IDDC = 115 A at TC = 100°C
- RDS(on) = 11.5 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Package backside suitable for reflow soldering at 260°C, 3 times
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard mutation