Datasheet4U Logo Datasheet4U.com

IMYR140R024M2H Datasheet 1400V SiC MOSFET

Manufacturer: Infineon

📥 Download Datasheet

General Description

Pin definition: 1 – Drain 2 – Source 3 – Kelvin sense contact 4 – Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R024M2H Package PG-TO247-4-U08 Marking 14M2H024 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-25 IMYR140R024M2H CoolSiC™ 1400 V SiC MOSFET G2 Table of contents Table of contents Description .

.

.

Overview

IMYR140R024M2H CoolSiC™ 1400 V SiC MOSFET G2 Final datasheet CoolSiC™ 1400 V SiC MOSFET G2 : Silicon Carbide MOSFET with .

Key Features

  • VDSS = 1400 V at Tvj = 25°C.
  • IDDC = 58 A at TC = 100°C.
  • RDS(on) = 24 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Package backside suitable for reflow soldering at 260°C, 3 times.
  • Overload operation up to Tvj = 200°C.
  • Short circuit withstand time 2 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode.

More Datasheets from Infineon

Part Number Description
IMYR140R029M2H 1400V SiC MOSFET
IMYR140R006M2H 1400V SiC MOSFET
IMYR140R008M2H 1400V SiC MOSFET
IMYR140R011M2H 1400V SiC MOSFET
IMYH200R012M1H MOSFET
IMYH200R024M1H 2000V SiC Trench MOSFET
IMYH200R050M1H 2000V SiC Trench MOSFET
IMYH200R075M1H MOSFET
IMYH200R100M1H 2000V SiC Trench MOSFET