IMYR140R029M2H Datasheet | Infineon

Features - VDSS = 1400 V at Tvj = 25°C - IDDC = 50 A at TC = 100°C - RDS(on) = 29 mΩ at VGS = 18 V, Tvj = 25°C - Very low switching losses - Package backside suitable for reflow soldering at 260°C, 3 times - Overload operation up to Tvj = 200°C - Short circuit withstand time 2 µs - Benchmark gate threshold voltage, VGS(th) = 4.2 V - Robust against parasitic turn on, 0 V turn-off gate voltage can be applied - Robust body diode for hard mutation - .XT interconnection technology for best-in-class thermal performance - Wide power pins (2 mm) for high current capability - Resistive weldable pins for direct busbar connections - TO247PLUS package with high creepage distance 10.8 mm and CTI ≥ 600 V - Suitable Infineon gate drivers can be found under https://.infineon./gdfinder 2021-10-27 restricted Potential applications - mercial, construction and agricultural vehicles (CAV) - EV Charging - Online UPS / Industrial UPS - String inverter - Energy storage systems (ESS) - General purpose drives (GPD) Product validation - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Pin definition: 1 - Drain 2 - Source 3 - Kelvin sense contact 4 - Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technolo Type IMYR140R029M2H Package PG-TO247-4-U08 Marking 14M2H029 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-02-27 Cool Si C™ 1400 V Si C MOSFET...