IPB029N06NF2S
IPB029N06NF2S is MOSFET manufactured by Infineon.
Features
- Optimizedforwiderangeofapplications
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeleadplating;Ro HSpliant
- Halogen-freeaccordingto IEC61249-2-21
Productvalidation
Qualifiedaccordingto JEDECStandard
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
2.9 mΩ
Qoss
68 n C
QG(0V..10V)
68 n C
D²PAK tab
2 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB029N06NF2S
Package PG-TO263-3
Marking 029N06NS
Related Links
- Final Data Sheet
Rev.2.0,2022-10-19
Strong IRFETTM2Power-Transistor
Tableof Contents
Description
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