Datasheet4U Logo Datasheet4U.com

IPB029N15NM6 - MOSFET

General Description

1 Maximum ratings 3 T

Key Features

  • N‑channel, normal level.
  • Very low on‑resistance RDS(on).
  • Superior thermal resistance.
  • 100% avalanche tested.
  • Pb‑free lead plating; RoHS compliant.
  • Halogen‑free according to IEC61249‑2‑21.
  • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB029N06N3 N-Channel MOSFET INCHANGE
IPB029N06N3G Power-Transistor Infineon Technologies
IPB020N10N5 N-Channel MOSFET INCHANGE
IPB020N10N5LF N-Channel MOSFET INCHANGE
IPB021N06N3G Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB029N06N3 Power Transistor
IPB029N06NF2S MOSFET
IPB020N08N5 MOSFET
IPB020N10N5 MOSFET
IPB020N10N5LF MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Public IPB029N15NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 150 V Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 150 V RDS(on),max 2.9 mΩ ID 165 A Qoss 310 nC QG 105 nC Qrr (500A/μs) 220 nC Type/Ordering Code IPB029N15NM6 Package PG‑TO263‑3 D²PAK tab 2 1 3 32 1 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Marking 029N15N6 Related Links ‑ Datasheet https://www.infineon.com 1 Revision 2.