IPB120N08S4-03
IPB120N08S4-03 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03
Product Summary V DS R DS(on),max (SMD version) ID
80 V 2.5 m W 120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120N08S4-03 IPI120N08S4-03 IPP120N08S4-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0803 4N0803 4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A
I AS
- V GS
- P tot T C=25°C
T j, T stg
- Value 120
480 920 120 ±20 278 -55 ... +175
Unit A m J A V W °C
Rev. 1.0 page 1
2014-06-20
IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03
Parameter
Symbol
Conditions min.
Values...
