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IPB120N08S4-04 - Power-Transistor

Key Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Product Summary VDS RDS(on),max (SMD version) ID 80 V 4.1 mW 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N08S4-04 IPI120N08S4-04 IPP120N08S4-04 Package Marking PG-TO263-3-2 4N0804 PG-TO262-3-1 4N0804 PG-TO220-3-1 4N0804 Maximum r.

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Full PDF Text Transcription for IPB120N08S4-04 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IPB120N08S4-04. For precise diagrams, and layout, please refer to the original PDF.

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • ...

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to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Product Summary VDS RDS(on),max (SMD version) ID 80 V 4.

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