IPB120N08S4-04
IPB120N08S4-04 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Ro HS pliant
- 100% Avalanche tested
IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04
Product Summary VDS RDS(on),max (SMD version) ID
80 V 4.1 m W 120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB120N08S4-04 IPI120N08S4-04 IPP120N08S4-04
Package
Marking
PG-TO263-3-2 4N0804
PG-TO262-3-1 4N0804
PG-TO220-3-1 4N0804
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol
Conditions
T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2)
E AS
I D=60A
Avalanche current, single pulse
I AS
- Gate source voltage
V GS
- Power dissipation
P tot
T C=25°C
Operating and storage temperature T j, T stg
- Rev. 1.1 page 1
Value...
