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IPB80N06S4-07 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.1 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0607 4N0607 4N0607 M.

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Datasheet preview – IPB80N06S4-07

Datasheet Details

Part number IPB80N06S4-07
Manufacturer Infineon
File Size 167.49 KB
Description Power-Transistor
Datasheet download datasheet IPB80N06S4-07 Datasheet
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OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 Product Summary V DS R DS(on),max (SMD version) ID 60 V 7.
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